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FGH4L40T120LQD IGBT Transistor Module 1200V 80A 306W Through Hole TO-247-4L

HongKong Wei Ya Hua Electronic Technology Co.,Limited
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    Buy cheap FGH4L40T120LQD IGBT Transistor Module 1200V 80A 306W Through Hole TO-247-4L from wholesalers
     
    Buy cheap FGH4L40T120LQD IGBT Transistor Module 1200V 80A 306W Through Hole TO-247-4L from wholesalers
    • Buy cheap FGH4L40T120LQD IGBT Transistor Module 1200V 80A 306W Through Hole TO-247-4L from wholesalers

    FGH4L40T120LQD IGBT Transistor Module 1200V 80A 306W Through Hole TO-247-4L

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    Brand Name : onsemi
    Model Number : FGH4L40T120LQD
    Price : Negotiable
    Supply Ability : 1000000pcs
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    FGH4L40T120LQD IGBT Transistor Module 1200V 80A 306W Through Hole TO-247-4L

    FGH4L40T120LQD IGBT Trench Field Stop 1200 V 80 A 306 W Through Hole TO-247-4L

    onsemi FGH4L40T120LQD IGBT

    onsemi FGH4L40T120LQD IGBT is a robust Ultra Field Stop Trench construction that provides superior performance in demanding switching applications. This IGBT is incorporated into the device which is a soft and fast co-packaged free-wheeling diode with a low forward voltage. The FGH4L40T120LQD IGBT offers both low on-state voltage and minimal switching loss. This IGBT operates at 175°C maximum junction temperature. The FGH4L40T120LQD IGBT operates at 1200V, 40A, and is built in a TO247 4L package. Typical applications include solar inverters and UPS, industrial switching, and welding.

    FEATURES

    • Extremely efficient trench with field stop technology
    • 175°C maximum junction temperature (TJ)
    • Fast and soft reverse recovery diode
    • Optimized for Low VCE(Sat)
    • 1200V maximum Collector-Emitter Voltage (VCE)

    APPLICATIONS

    • Solar inverter and UPS
    • Industrial switching
    • Welding

    PIN CONNECTION

    onsemi FGH4L40T120LQD IGBT

    GATE CHARGE CHARACTERISTICS

    Performance Graph - onsemi FGH4L40T120LQD IGBT
    Quality FGH4L40T120LQD IGBT Transistor Module 1200V 80A 306W Through Hole TO-247-4L for sale
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