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IXGA20N250HV IGBT Transistor Module 2500V 30A 150W Surface Mount TO-263HV

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IXGA20N250HV IGBT Transistor Module 2500V 30A 150W Surface Mount TO-263HV

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Brand Name :	IXYS
Model Number :	IXGA20N250HV
Price :	Negotiable
Supply Ability :	1000000pcs

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IXGA20N250HV IGBT Transistor Module 2500V 30A 150W Surface Mount TO-263HV

IXGA20N250HV IGBT 2500 V 30 A 150 W Surface Mount TO-263HV

IXYS IXGA20N250HV High Voltage IGBT

IXYS IXGA20N250HV High Voltage IGBT (Insulated Gate Bipolar Transistor) provides a square Reverse Bias Safe Operating Area (RBSOA) and 10µs short circuit withstanding capability. The IXGA20N250HV features 2500V collector-to-emitter voltage, 12A collector current at +110°C, and 3.1V collector-emitter saturation voltage. The device has a positive temp coefficient of VCE(sat), ideal for paralleling.

The IXGA20N250HV IGBT enables a single device in systems whose circuits previously used multiple cascaded lower-voltage switches. Such device consolidation reduces the number of power devices and improves cost and efficiency by eliminating complex drive and voltage balancing components. In systems whose circuits previously utilized high voltage SCRs, this high-voltage IGBT provides the designer with a true switch to easily implement signal modulation schemes. This ability improves efficiency, simplifying wave-shaping and enabling load disconnection for improved system safety. Traditional high voltage EMRs and discharge relays can also be replaced, reducing system complexity and improving overall reliability.

The IXYS IXGA20N250HV High Voltage IGBT is offered in an industry-standard TO-263HV package and features a -55°C to +150°C junction temperature range.

FEATURES

Industry-standard TO-263HV package
High voltage package
Electrically isolated tab

High peak current capability
Low saturation voltage
Molding epoxy meets UL 94 V-0 flammability classification

APPLICATIONS

Pulser circuits
Capacitor discharge circuits
High voltage power supplies

High voltage test equipment
Laser and X-ray generators

SPECIFICATIONS

2500V collector-emitter voltage (VCES)
2500V collector-gate voltage (VCGR)
±20V gate-emitter voltage (VGES)
±30V gate-emitter voltage transient (VGEM)
150W collector power dissipation (PC)

30A collector current at +25°C (IC25)
12A collector current at +110°C (IC110)
3.10V collector-emitter saturation voltage (VCE(sat))
0.83°C/W junction-case thermal resistance (RthJC)
-55°C to +150°C junction temperature range (Tj)

PIN DESIGNATIONS & SCHEMATIC

Mechanical Drawing - IXYS IXGA20N250HV High Voltage IGBT

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